One dimensional metal oxide semiconductor nanowires of copper (I) oxide (Cu2O), zinc oxide (ZnO), and their heterojunction nanowires possess remarkable physical and chemical properties. ZnO and Cu2O are attractive because the metals are abundant on earth, inexpensive, nontoxic. Moreover, these oxides have useful optical and electrical properties suitable for a wide variety of electrical devices, because their electrical conduction can be predictably controlled by doping. We here restrict the disscussion using a Hot Tube Vacuum Thermal Evaporation. The NWs in these devices will be studied by physical vapor deposition known as vapor-liquid-solid (VLS). Therefore, we explore conventional methods, particularly the VLS of growing ZnO and Cu2O nanowires which are assisted by the catalyst. In this short review, we report the individual and combined (Cu2O/ZnO) junction nanowires by PVD method. The main advantages of these composite nanowires are the natural p-n characteristics, the broad light absorption, the high sensitivity to humidity changes, and the fast dynamic response. The combination of all characteristics offered by Cu2O/ZnO nanowires can enable the fabrication of diverse sensing devices, and photovoltaic solar cells.

Cuprous oxide nanowires have been synthesized by heating copper foil in the presence of oxygen rich environment using a hot tube vacuum thermal evaporation method. The effect of growth parameters such as growth time, temperature and oxidative environment on the morphology of the nanowires is investigated. The growth of cuprous oxide nanowires from copper foils thermally oxidized in the presence of oxygen rich at temperatures between 300 and 500 0C. The nanowires were formed within the temperature range of 400 - 500 0C with diameters and length between 25 - 100 nm and length 1 - 4 ?m, respectively. This gave an estimate of aspect ratio around 40. Observation from FESEM results revealed the optimal growth of cuprous oxide nanowires which occurred at oxidation times for 1h, 1/2h and 25 minutes and flow rates of oxygen at 0.09 psi, 0.12 psi and 0.08 psi. The atom% of copper and oxygen were measured using EDX and their existence were later confirmed by XRD, essentially indicated by 40% an 60% of copper and oxygen contents, respectively.