Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode

The electrical characteristic of a Ga 0.952 In 0.048 N0.016 As 0.984 p-i-n diode with quantum wells was characterized by current-voltage (I-V) measurement at room temperature. The electrical parameters of the diode such as a leakage current (𝐼𝑜), the threshold voltage (VT) and dynamic resistance (𝑅𝑑) were extracted from the I-V characteristics. The p-i-n diode has a leakage current of 0.010 µA, threshold voltage
of 0.22 V and dynamic resistance of 262 kΩ. Moreover, the Schottky parameters of the Ti-Au/n-GaAs pi-n diode such as an ideality factor (η), a Schottky barrier height (Φb) and series resistance (Rs) were determined using thermionic emission (TE) analysis of the forward-bias I-V characteristic as well as Norde and Cheung functions. The Schottky diode parameters showed an ideality factor of 4.79 with a barrier height of 0.79 eV were obtained using forward-bias I-V characteristics. On the other hand, barrier heights determined from the Norde and Cheung functions were calculated at 0.87 eV and 0.71 eV, respectively. As there is an inconsistency between the current-voltage characteristics and the models, the necessity to investigate the temperature dependence diode parameters for accurate determination of the mechanism responsible for the charge transfer and Schottky barrier height of GaInNAs p-i-n diode.

Keywords: GaInNAs; p-i-n diode; current-voltage; barrier height; thermionic emission theory