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Investigations of the co-doping of boron and lithium into CVD diamond thin films

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dc.FundingDetailsEP/K502996/1 University of Bristol Interface
dc.FundingDetailsWith thanks to James Smith, Liam Payne and Peter Heard for their invaluable help and advice, the facilities at the Interface Analysis Centre at the University of Bristol and EPSRC DTA award EP/K502996/1 for funding this project. We also thank Xian Zhang for the resistance data for sample Q. Supplementary material and raw data for this report can be found in the University of Bristol data repository: DOI: http://dx.doi.org/10.5523/bris.20y9s3hoxu2h25v7h3ru38i15.
dc.citedby7
dc.contributor.affiliationsFaculty of Science and Technology
dc.contributor.affiliationsUniversity of Bristol
dc.contributor.affiliationsUniversiti Sains Islam Malaysia (USIM)
dc.contributor.authorHalliwell S.C.en_US
dc.contributor.authorMay P.W.en_US
dc.contributor.authorFox N.A.en_US
dc.contributor.authorOthman M.Z.en_US
dc.date.accessioned2024-05-28T08:34:27Z
dc.date.available2024-05-28T08:34:27Z
dc.date.issued2017
dc.description.abstractLithium has been incorporated into heavily boron-doped single-crystal (SCD), microcrystalline (MCD) and nanocrystalline diamond (NCD) films at concentrations up to ~ 2 × 1020 cm−3 using Li3N as a solid-state Li source for in-diffusion and diborane as the B source. The quality, morphology, electrical resistance and concentration of B and Li dopants present in a range of B + Li co-doped SCD, MCD and NCD films have been studied. Analysis of the SIMS depth profiles for Li enabled the diffusion constants, D, to be measured (in units of cm2 s−1) as: 2.5 × 10−15, 1.3 × 10−14 and 7.0 × 10−14 for SCD, MCD and NCD, respectively, at 1100 K. The value for D for SCD agrees closely with that in the literature, while the much larger values for the polycrystalline films provide direct evidence that Li can diffuse rapidly along or through diamond grain boundaries at elevated temperatures. If prolonged diffusion allows the Li to reach the Si substrate, the Si acts as a sink for Li absorbing large quantities and reducing its concentration in the diamond film.en_US
dc.description.natureFinalen_US
dc.identifier.CODENDRMTE
dc.identifier.doi10.1016/j.diamond.2017.05.001
dc.identifier.epage122
dc.identifier.issn9259635
dc.identifier.scopus2-s2.0-85019161504
dc.identifier.spage115
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85019161504&doi=10.1016%2fj.diamond.2017.05.001&partnerID=40&md5=d74121e4e94320a89cee29419735ffa7
dc.identifier.urihttps://oarep.usim.edu.my/handle/123456789/9091
dc.identifier.volume76
dc.languageEnglish
dc.language.isoen_USen_US
dc.publisherElsevier Ltden_US
dc.relation.ispartofOpen Accessen_US
dc.relation.ispartofDiamond and Related Materials
dc.sourceScopus
dc.titleInvestigations of the co-doping of boron and lithium into CVD diamond thin filmsen_US
dc.title.alternativeDiamond Relat. Mat.en_US
dc.typeArticleen_US
dspace.entity.typePublication

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