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Etching Time Effect On Photoluminescence, Porosity, Surface Morphology And Conductivity Of Porous Silicon

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dc.contributor.authorChan Kok Shengen_US
dc.contributor.authorWan M. Khairul Wan Mohamed Zinen_US
dc.contributor.authorDwight Tham Jern Eeen_US
dc.contributor.authorMohd Ikmar Nizam Mohamad Isaen_US
dc.contributor.authorMohd Faiz Hassanen_US
dc.date.accessioned2024-05-28T05:47:43Z
dc.date.available2024-05-28T05:47:43Z
dc.date.issued2016
dc.descriptionVolume: 3 No: 1en_US
dc.description.abstractRecently, porous silicon (PS) gains a lot of research interest with its potential applications in optoelectronics, flat panel displays technology, and chemical sensor. In this work, PS was chemically etched on p-type silicon (Si) wafer by hydrofluoric acid (HF) with 40% nitric acid (HNO3) concentration at different etching time. The PS has porosity dependent on etching time in the range (38-60) % that gives orange-red photoluminescence (PL) between 657 nm to 661 nm. The PL intensity increases and the peak wavelength shows slight blue shift as etching time increases. The energy gap obtained are higher than pure Si (1.11eV). Meanwhile, the conductivity of the PS decreases as the porosity and energy gap increase.en_US
dc.identifier.citationSheng, C., Wan Mohamed Zin, W. M. K., Jern Ee, D. T., Mohamad Isa, M. I. N., & Hassan, M. (2016). Etching Time Effect on Photoluminescence, Porosity, Surface Morphology and Conductivity of Porous Silicon. EDUCATUM Journal of Science, Mathematics and Technology, 3(1), 20-27. Retrieved from https://ejournal.upsi.edu.my/index.php/EJSMT/article/view/41en_US
dc.identifier.doihttps://ejournal.upsi.edu.my/index.php/EJSMT/article/view/41
dc.identifier.epage27
dc.identifier.issn2462-2451
dc.identifier.issue1
dc.identifier.spage20
dc.identifier.urihttps://ejournal.upsi.edu.my/index.php/EJSMT/article/view/41
dc.identifier.urihttps://oarep.usim.edu.my/handle/123456789/6518
dc.identifier.volume3
dc.language.isoen_USen_US
dc.publisherUniversiti Pendidikan Sultan Idrisen_US
dc.relation.ispartofEDUCATUM Journal of Science, Mathematics and Technologyen_US
dc.subjectporous silicon, chemical etching, photoluminescence, energy gap, conductivityen_US
dc.titleEtching Time Effect On Photoluminescence, Porosity, Surface Morphology And Conductivity Of Porous Siliconen_US
dc.typeArticleen_US
dspace.entity.typePublication

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