Publication:
Effect of solution molarity on optical properties of Al doped ZnO thin films

dc.Conferencecode148183
dc.Conferencedate29 August 2017 through 31 August 2017
dc.Conferencename7th Asian Physics Symposium, APS 2017
dc.FundingDetailsKementerian Pendidikan: USIM/RAGS/FST/36/50215
dc.FundingDetailsThis project was sponsored by the Kementerian Pendidikan Malaysia (KPM) through grant scheme (USIM/RAGS/FST/36/50215). The author would also like to thank the Photonic Lab, Universiti aSins lIamsMalaysia for guidance naupportd . s
dc.contributor.affiliationsFaculty of Science and Technology
dc.contributor.affiliationsUniversiti Sains Islam Malaysia (USIM)
dc.contributor.authorRashid A.R.A.en_US
dc.contributor.authorOthman N.S.en_US
dc.contributor.authorDasuki K.A.en_US
dc.date.accessioned2024-05-29T01:56:01Z
dc.date.available2024-05-29T01:56:01Z
dc.date.issued2019
dc.description.abstractUndoped and Al-doped ZnO thin films have been prepared by the sol gel method. Zinc acetate dihydrate, ethanol and monoethanolamine were used as precursor, solvent and stabilizer, respectively. In the case of molarity study for Al-doped ZnO, aluminum nitrate nonahydrate was added to the precursor solution from 0 at. % to 6 at. % at molarity of 0.1 M, 0.2 M and 0.3 M. The optical properties were characterized using UV-Vis where the band gap of undoped ZnO increases as the annealing temperature increase and the band gap decrease as the molarity increment. Meanwhile the band gap increase upon increment of Al dopant under molarity of 0.1 M and 0.2 M due to Burstein-moss effects. Meanwhile at 0.3 M, the bandgap increase until 4 at. % of Al and suddenly decrease abruptly at 6 at. % of Al. The effect of molarity and dopant percentage on the thin film gives a different value of energy band gap.en_US
dc.description.natureFinalen_US
dc.editorPramuditya S.Permana S.Irwanto D.Waris A.Sahin S.Muraza O.Kinoshita M.en_US
dc.identifier.ArtNo12068
dc.identifier.doi10.1088/1742-6596/1204/1/012068
dc.identifier.issn17426588
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85066323695
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85066323695&doi=10.1088%2f1742-6596%2f1204%2f1%2f012068&partnerID=40&md5=dee9b354233fe4820594ed504559698a
dc.identifier.urihttps://oarep.usim.edu.my/handle/123456789/9786
dc.identifier.volume1204
dc.languageEnglish
dc.language.isoen_USen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.ispartofOpen Accessen_US
dc.relation.ispartofJ. Phys. Conf. Ser.
dc.sourceScopus
dc.sourcetitleJournal of Physics: Conference Series
dc.subjectAluminum compoundsen_US
dc.subjectEnergy gapen_US
dc.subjectMetallic filmsen_US
dc.subjectMolar concentrationen_US
dc.subjectOptical filmsen_US
dc.subjectOrganic solventsen_US
dc.subjectSol-gelsen_US
dc.subjectAluminum nitrate nonahydrateen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectBurstein-Moss effectsen_US
dc.subjectMonoethanolamineen_US
dc.subjectPrecursor solutionsen_US
dc.subjectProperties of Alen_US
dc.subjectZinc acetate dihydrateen_US
dc.subjectThin filmsen_US
dc.titleEffect of solution molarity on optical properties of Al doped ZnO thin filmsen_US
dc.title.alternativeJ. Phys. Conf. Ser.en_US
dc.typeConference Paperen_US
dspace.entity.typePublication

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