Muhammad Izzuddin Abd SamadKhairul Anuar MohamadMohammad Syahmi NordinNafarizal NayanAfishah AliasMarinah OthmanAdrian Boland-ThomsAnthony John Vickers2024-05-282024-05-28201918/2/20202332-32991696-910.13189/ujeee.2019.061612http://www.hrpub.org/journals/article_info.php?aid=8612https://oarep.usim.edu.my/handle/123456789/5678This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band () parameters. The first two methods used Vegard’s law and Varshni’s equation to estimate by considering Ga1-xInxAs as ternary alloy based on temperature dependence, with values of bowing parameter of 0.475 and 0.477, respectively. The third method used excitonic band gap theory for Ga1-xInxAs alloy temperature dependence by considering Passler fitting () and average phonon temperature (). Results depict that optimum nitrogen fraction was in the range of 0.012 to 0.018% to achieve the device response at 1.3 μm wavelength, with an energy band gap in range of 0.955 ± 0.005 eV. Future work shows a potential study on influence of indium fractions in tailored energy band gap of Ga1-xInxN yAs1-y alloy and compressive strain of material. KEYWORDS Band Anti-Crossing, Dilute Nitride, Gallium Arsenide, Ga1-xInxN yAs1-y Alloy, Band Gap, 1.3 μm WavelengthenBand Anti-Crossing,Dilute Nitride,Gallium Arsenide,Ga1-xInxN yAs1-y Alloy,Band Gap,1.3 μm WavelengthArticle909565B