Nayan, NNNayanSandan, MZMZSandanWei, LJLJWeiAhmad, MKMKAhmadLias, JJLiasShakaff, AYMAYMShakaffZakaria, AAZakariaZain, AFMAFMZain2024-05-292024-05-2920161876-619610.1016/j.proche.2016.07.023WOS:000387292100026https://oarep.usim.edu.my/handle/123456789/11571Cuprous oxide and cupric oxide thin films were deposited on silicon wafer with additional substrate bias voltage using radio-frequency magnetron sputtering of a Cu target with Ar+O-2 discharge plasma. Optical emission spectroscopy was employed to monitor the intensity of atomic Cu and O emission lines at various substrate bias voltages and oxygen flow ratios. Thin film transition from cuprous oxide to cupric oxide phase was observed by X-ray diffraction analysis when the oxygen flow ratio increased. This transition was not influenced by the substrate bias voltage. Optical emission spectroscopy showed a real time monitoring results of the transition from cuprous to cupric oxide thin films The transition was observed at a critical O-2 flow ratio of 7%. The results proposed a tightly control of reactive Cu sputtering through a closed loop and real-time monitoring system for precise copper oxide thin films deposition. (C) 2016 The Authors. Published by Elsevier B.V.en-USMagnetron sputtering plasmaThin film depositionCopper oxideOptical emission sepctroscopyGas sensorProceedings Paper12412920