Chan Kok ShengWan M. Khairul Wan Mohamed ZinDwight Tham Jern EeMohd Ikmar Nizam Mohamad IsaMohd Faiz Hassan2024-05-282024-05-282016Sheng, C., Wan Mohamed Zin, W. M. K., Jern Ee, D. T., Mohamad Isa, M. I. N., & Hassan, M. (2016). Etching Time Effect on Photoluminescence, Porosity, Surface Morphology and Conductivity of Porous Silicon. EDUCATUM Journal of Science, Mathematics and Technology, 3(1), 20-27. Retrieved from https://ejournal.upsi.edu.my/index.php/EJSMT/article/view/412462-2451https://ejournal.upsi.edu.my/index.php/EJSMT/article/view/41https://ejournal.upsi.edu.my/index.php/EJSMT/article/view/41https://oarep.usim.edu.my/handle/123456789/6518Volume: 3 No: 1Recently, porous silicon (PS) gains a lot of research interest with its potential applications in optoelectronics, flat panel displays technology, and chemical sensor. In this work, PS was chemically etched on p-type silicon (Si) wafer by hydrofluoric acid (HF) with 40% nitric acid (HNO3) concentration at different etching time. The PS has porosity dependent on etching time in the range (38-60) % that gives orange-red photoluminescence (PL) between 657 nm to 661 nm. The PL intensity increases and the peak wavelength shows slight blue shift as etching time increases. The energy gap obtained are higher than pure Si (1.11eV). Meanwhile, the conductivity of the PS decreases as the porosity and energy gap increase.en-USporous silicon, chemical etching, photoluminescence, energy gap, conductivityArticle202731