Atiqah Nabieha AzmiWan Maryam Wan Ahmad KamilHaslan Abu HassanWan Zakiah Wan IsmailOtto L. Muskens2024-05-292024-05-2920232024-2-20Azmi, A. N., Wan Ahmad Kamil, W. M., Abu Hassan, H., Wan Ismail, W. Z., & Muskens, O. L. (2023). Random lasing behaviour in Al-doped ZnO nanorods. Optical Materials, 138, 113718. https://doi.org/10.1016/j.optmat.2023.1137180925-346710.1016/j.optmat.2023.113718https://www.sciencedirect.com/science/article/abs/pii/S0925346723002902?via%3Dihubhttps://www.scopus.com/record/display.uri?eid=2-s2.0-85151303741&origin=resultslist&sort=plf-f&src=s&sid=8cf049cb0534d9dab2737fdd866039ca&sot=b&sdt=b&s=TITLE-ABS-KEY%28Random+Lasing+Behaviour+In+Al-doped+Zno+Nanorods%29&sl=100&sessionSearchId=8cf049cb0534d9dab2737fdd866039ca&relpos=0https://oarep.usim.edu.my/handle/123456789/10810Volume 138A novel method of doping Aluminum (Al) into zinc oxide (ZnO) nanorods by a simple chemical dip process is evaluated in terms of its performance in random lasing. The ZnO nanorods were synthesized by the chemical bath deposition (CBD) method at a fixed temperature of 96 °C for 3 h. The ZnO nanorods were then dipped into a fixed doping solution concentration. The dip time was varied between 0 s and 80 s and a gradual increase of Al % from the nanorod array was observed with increasing dip time. Doping ZnO nanorods in aluminum nitrate nonahydrate solution for 40 s contributes to random lasing with the lowest threshold value of 12.48 mJ/cm2 and a spectral width of 2.12 nm.en-USArticle16138