This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band () parameters. The first two methods used Vegard’s law and Varshni’s equation to estimate by considering Ga1-xInxAs as ternary alloy based on temperature dependence, with values of bowing parameter of 0.475 and 0.477, respectively. The third method used excitonic band gap theory for Ga1-xInxAs alloy temperature dependence by considering Passler fitting () and average phonon temperature (). Results depict that optimum nitrogen fraction was in the range of 0.012 to 0.018% to achieve the device response at 1.3 μm wavelength, with an energy band gap in range of 0.955 ± 0.005 eV. Future work shows a potential study on influence of indium fractions in tailored energy band gap of Ga1-xInxN yAs1-y alloy and compressive strain of material. KEYWORDS Band Anti-Crossing, Dilute Nitride, Gallium Arsenide, Ga1-xInxN yAs1-y Alloy, Band Gap, 1.3 μm Wavelength

The electrical characteristic of a Ga 0.952 In 0.048 N0.016 As 0.984 p-i-n diode with quantum wells was characterized by current-voltage (I-V) measurement at room temperature. The electrical parameters of the diode such as a leakage current (𝐼𝑜), the threshold voltage (VT) and dynamic resistance (𝑅𝑑) were extracted from the I-V characteristics. The p-i-n diode has a leakage current of 0.010 µA, threshold voltage of 0.22 V and dynamic resistance of 262 kΩ. Moreover, the Schottky parameters of the Ti-Au/n-GaAs pi-n diode such as an ideality factor (η), a Schottky barrier height (Φb) and series resistance (Rs) were determined using thermionic emission (TE) analysis of the forward-bias I-V characteristic as well as Norde and Cheung functions. The Schottky diode parameters showed an ideality factor of 4.79 with a barrier height of 0.79 eV were obtained using forward-bias I-V characteristics. On the other hand, barrier heights determined from the Norde and Cheung functions were calculated at 0.87 eV and 0.71 eV, respectively. As there is an inconsistency between the current-voltage characteristics and the models, the necessity to investigate the temperature dependence diode parameters for accurate determination of the mechanism responsible for the charge transfer and Schottky barrier height of GaInNAs p-i-n diode. Keywords: GaInNAs; p-i-n diode; current-voltage; barrier height; thermionic emission theory