Publication:
Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode

Simple item page
dc.contributor.authorMuhammad Izzuddin Abd Samaden_US
dc.contributor.authorKhairul Anuar Mohamaden_US
dc.contributor.authorMohammad Syahmi Nordinen_US
dc.contributor.authorNafarizal Nayanen_US
dc.contributor.authorAfishah Aliasen_US
dc.contributor.authorMarinah Othmanen_US
dc.contributor.authorAdrian Boland-Thomsen_US
dc.contributor.authorAnthony John Vickersen_US
dc.date.accessioned2024-05-27T14:47:12Z
dc.date.available2024-05-27T14:47:12Z
dc.date.issued2019
dc.date.submitted18/2/2020
dc.descriptionASM Sc. J., 12, Special Issue 4, 2019 for ICSE2018, 131-138en_US
dc.description.abstractThe electrical characteristic of a Ga 0.952 In 0.048 N0.016 As 0.984 p-i-n diode with quantum wells was characterized by current-voltage (I-V) measurement at room temperature. The electrical parameters of the diode such as a leakage current (𝐼𝑜), the threshold voltage (VT) and dynamic resistance (𝑅𝑑) were extracted from the I-V characteristics. The p-i-n diode has a leakage current of 0.010 µA, threshold voltage of 0.22 V and dynamic resistance of 262 kΩ. Moreover, the Schottky parameters of the Ti-Au/n-GaAs pi-n diode such as an ideality factor (η), a Schottky barrier height (Φb) and series resistance (Rs) were determined using thermionic emission (TE) analysis of the forward-bias I-V characteristic as well as Norde and Cheung functions. The Schottky diode parameters showed an ideality factor of 4.79 with a barrier height of 0.79 eV were obtained using forward-bias I-V characteristics. On the other hand, barrier heights determined from the Norde and Cheung functions were calculated at 0.87 eV and 0.71 eV, respectively. As there is an inconsistency between the current-voltage characteristics and the models, the necessity to investigate the temperature dependence diode parameters for accurate determination of the mechanism responsible for the charge transfer and Schottky barrier height of GaInNAs p-i-n diode. Keywords: GaInNAs; p-i-n diode; current-voltage; barrier height; thermionic emission theoryen_US
dc.identifier.epage138
dc.identifier.issn1823-6782
dc.identifier.issue4
dc.identifier.spage131
dc.identifier.urihttps://www.akademisains.gov.my/asmsj/article/electrical-properties-of-a-ga0-952in0-048n0-016as0-984-p-i-n-schottky-barrier-diode/
dc.identifier.urihttps://oarep.usim.edu.my/handle/123456789/3768
dc.identifier.volume12
dc.language.isoenen_US
dc.publisherThe Academy of Sciences Malaysiaen_US
dc.relation.ispartofASM Science Journalen_US
dc.subjectGaInNAs;en_US
dc.subjectp-i-n diode;en_US
dc.subjectcurrent-voltage;en_US
dc.subjectbarrier height;en_US
dc.subjectthermionic emission theoryen_US
dc.titleElectrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diodeen_US
dc.typeArticleen_US
dspace.entity.typePublication

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode.pdf
Size:
520.6 KB
Format:
Adobe Portable Document Format
Description:
Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode
Download

Collections

Other Publications